AP22850

Document number: DS36540 Rev. 2 - 2

3 of 14

www.diodes.com

March 2015

© Diodes Incorporated

AP22850

0

Functional Block Diagram

DIS

SS

EN

GND

VIN

VOUT

PG

Power

Good

VBIAS

Gate Drive

Symbol

Parameter

Ratings

Units

Input Voltage

12.0

V

Output Voltage

12.0

V

Enable Voltage

6.0

V

Bias Voltage

6.0

V

Load Current

8.0

A

Maximum Junction Temperature

125

°C

Storage Temperature

−55 to +150

°C

Power Dissipation

(Note 5)

0.35

W

(Note 6)

1.8

W

Thermal Resistance, Junction to Ambient

(Note 5)

300

°C/W

(Note 6)

60

Thermal Resistance, Junction to Case

-

5

°C/W

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

5. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state

condition.

6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady state condition.