AL9902FDF-13 datasheet(4/18 Pages) DIODES

4 / 18 page

AL9902

Document number: DS37878 Rev. 1 - 2

4 of 18

www.diodes.com

July 2015

AL9902

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Specifications apply to AL9902 unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ishdn

Shut-Down Mode Supply Current

Pin PWM to GND,

VIN = 20V

0.5

VDD

Internally Regulated Voltage

VIN = VIN(MIN)~ 500V, (Note 8) lDD(ext) = 0,

Gate pin open

7.2

7.5

8.1

IDD(ext)

VDD Current Available for External Circuitry VIN = 20 to 100V (Note 7)

1.0

UVLO

VDD Under Voltage Lockout Threshold

VDD rising

6.4

6.7

7.2

∆UVLO

VDD Under Voltage Lockout Hysteresis

VDD falling

500

RPWM

PWM Pull-Down Resistance

VPWM= 5V

150

200

250

kΩ

MOSFET Threshold Voltage

ISW = 0.5A

VFD

MOSFET Diodes Forward Voltage

ID = 0.5A

0.85

VCS(hi)

Current Sense Threshold Voltage

TA = -40°C to +125°C

237.5

250

262.5

fOSC

Oscillator Frequency

ROSC = 1MΩ

kHz

ROSC = 226kΩ

100

120

DMAXhf

Maximum Oscillator PWM Duty Cycle

fPWMhf = 25kHz, at GATE, CS to GND.

100

VLD

Linear Dimming Pin Voltage Range

TA = <125°C, VIN = 20V

250

TSD

Thermal Shut-Down (Junction)

Use DFN

JA when I

SW=0.4A, VDS=1V

141

°C

TSDH

Thermal Shut-Down Hysteresis

JA

Thermal Resistance Junction-to-Ambient

U-DFN6040-12 (Note 8)

C/W

JC

Thermal Resistance Junction-to-Case

C/W

JA

Thermal Resistance Junction-to-Ambient

SO-16

100

C/W

JC

Thermal Resistance Junction-to-Case

C/W

Notes:

7. Also limited by package power dissipation limit, whichever is lower.

8. Device mounted on FR-4 PCB (25mm x 25mm 1oz copper, minimum recommended pad layout on top. For better thermal performance, larger

copper pad for heat-sink is needed.

Internal MOSFET Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

650

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 650V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±30V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(th)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

—

VGS = 10V, ID = 1A

Diode Forward Voltage

VSD

—

0.7

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

479

—

VDS = 25V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

1.9

—

Gate Resistance

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

VDS = 520V, VGS = 10V,

ID = 2A

Gate-Source Charge

Qgs

—

2.5

—

Gate-Drain Charge

Qgd

—

7.3

—

Turn-On Delay Time

tD(on)

—

VDS = 325V, VGS = 10V,

RG = 25Ω, ID = 2.5A

Turn-On Rise Time

—

Turn-Off Delay Time

tD(off)

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

trr

—

174

—

VDS = 100V, IF = 2A,

di/dt = 100A/

μs

Body Diode Reverse Recovery Charge

Qrr

—

884

—

Notes:

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

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