APR34150

Document number: DS37985 Rev. 2 - 2

5 of 10

www.diodes.com

October 2015

© Diodes Incorporated

APR34150

MOSFET Static Characteristics

Parameters

Symbol

Conditions

Min

Typ

Max

Unit

Drain to Source Breakdown

Voltage

50

–

–

V

Gate Threshold Voltage

0.5

0.9

2

V

Zero Gate Voltage Drain

Current

–

–

1

μA

Gate to Source Leakage

Current

–

–

±10

μA

Drain to Source On-state

Resistance

12

17

30

m

Ω

MOSFET Dynamic Characteristics

Parameters

Symbol

Conditions

Min

Typ

Max

Unit

Input Capacitance

–

1316

–

pF

Output Capacitance

–

97

–

Reverse Transfer Capacitance

–

85

–

Gate to Source Charge

–

3.2

–

nC

Gate to Drain Charge (Miller

Charger)

–

5.7

–

Total Gate Charge

–

15.2

–

Gate Resistance

–

–

0.85

–

Ω

Operation Description

MOSFET Driver

The operation of the SR is described with timing diagram shown in Figure 1. APR34150 monitors the MOSFET drain-source voltage. When the

MOSFET will turn on and the current will transfer from the body diode into the MOSFET’s channel.

In the process of drain current decreasing linearly toward zero, the drain-source voltage rises synchronically. When it rises over the turn off

I,V

t

t

0

0

Figure 1. Typical Waveforms of APR34150