D5V0L4B5S

Document number: DS

2 of 5

www.diodes.com

January 2012

© Diodes Incorporated

D5V0L4B5S

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

84

W

8/20

μs, Per Fig. 2

Peak Pulse Current

6

A

8/20

μs, Per Fig. 2

ESD Protection – Contact Discharge

±30

kV

Standard IEC 61000-4-2

ESD Protection – Air Discharge

±30

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

200

mW

Thermal Resistance, Junction to Ambient (Note 5)

625

°C/W

Operating Junction Temperature Range

-65 to +150

°C

Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

-

-

5.0

V

-

Breakdown Voltage

6

7

8

V

Reverse Leakage Current (Note 6)

-

10

100

nA

Clamping Voltage (Note 4)

-

7.0

9.0

V

-

8.7

10.7

V

-

10.5

12.0

V

-

11.5

14.0

V

Differential Resistance

-

0.2

-

Ω

Channel Input Capacitance

-

15

20

pF

(Channel to Pin 2)

Notes:

4. Measured from channel to pin 2; Non-repetitive current pulse per Fig. 2.

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

25

50

75

100

125

150

175

200

100

75

50

25

0

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Pulse Derating Curve

A

0

t, TIME ( s)

Fig. 2 Pulse Waveform

μ

20

40

60

100

50

0