ZXMS6004DN8

Document number: DS38040 Rev. 2 - 2

3 of 9

www.diodes.com

August 2015

© Diodes Incorporated

ZXMS6004DN8

Thermal Characteristics

Characteristic

Symbol

Value

Units

Linear Derating Factor

1.21

9.7

W

mW/°C

Linear Derating Factor

1.56

12.5

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 5)

103

°C/W

Thermal Resistance, Junction to Ambient (Note 6)

81

°C/W

Thermal Resistance, Junction to Case (Note 7)

13.5

°C/W

Operating Temperature Range

-40 to +150

°C

Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. Thermal resistance between junction and the mounting surfaces of drain and source pins.

Recommended Operating Conditions

The ZXMS6004DN8 is optimized for use with µC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

0

5.5

V

Ambient Temperature Range

-40

+125

°C

High Level Input Voltage for MOSFET to be On

3

5.5

V

Low Level Input Voltage for MOSFET to be Off

0

0.7

V

Peripheral Supply Voltage (voltage to which load is referred)

0

36

V