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AS4LC8M8S0 bảng dữ liệu(PDF) 17 Page - Alliance Semiconductor Corporation

tên linh kiện AS4LC8M8S0
Giải thích chi tiết về linh kiện  3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
PDF  24 Pages
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nhà sản xuất  ALSC [Alliance Semiconductor Corporation]
Trang chủ  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC8M8S0 bảng dữ liệu(HTML) 17 Page - Alliance Semiconductor Corporation

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AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
17
write cycle
Precharge command
A Precharge command can be used to interrupt burst read/write operation during the read cycle. During RD, burst read is
terminated and o/p goes to High Z after CAS latency. The same bank can be activated after tRP. During write, burst write
operation is terminated immediately. Data written two cycles prior to the precharge command will be correctly stored. Set
DQM high one cycle before Precharge command and hold it high until Precharge command to mask and avoid writing invalid
data.
read cycle (CL = 2)
read cycle (CL = 3)
write cycle (BL = 8)
CLK
CMD
DQ
Burst stop
Write data
(CL = 2,3)
Q0
Q1
Q2
Q3
CLK
CMD
DQ
Read data
PRE
ACT
Q0
Q1
Q2
Q3
tRP
CLK
CMD
DQ
Read data
PRE
ACT
Q0
Q1
Q2
Q3
CLK
CMD
DQ
Write data
PRE
ACT
D0
D1
D2
Q4
tRP
D3
Masked
DQM



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