POWERDI is a registered trademark of Diodes Incorporated.

DMTH4007LPS

Document number: DS37356 Rev. 4 - 2

2 of 7

www.diodes.com

October 2015

© Diodes Incorporated

DMTH4007LPS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

15.5

13

A

100

80

A

Avalanche Current, L = 0.1mH

20

A

Avalanche Energy, L = 0.1mH

20

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

2.7

W

Thermal Resistance, Junction to Ambient (Note 5)

55

°C/W

Total Power Dissipation (Note 6)

150

W

Thermal Resistance, Junction to Case (Note 6)

1

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

40

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

—

3

V

Static Drain-Source On-Resistance

—

5.4

6.5

m

Ω

—

8.4

9.8

Diode Forward Voltage

—

—

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

1,895

—

pF

f = 1MHz

Output Capacitance

—

485

—

Reverse Transfer Capacitance

—

20.9

—

Gate Resistance

—

0.62

—

Ω

—

12.4

—

nC

—

29.1

—

Gate-Source Charge

—

5.9

—

Gate-Drain Charge

—

3.5

—

Turn-On Delay Time

—

5.4

—

ns

Turn-On Rise Time

—

4.5

—

Turn-Off Delay Time

—

16.2

—

Turn-Off Fall Time

—

3.5

—

Body Diode Reverse Recovery Time

—

30.6

—

ns

IF = 20A, di/dt = 10

0A/μs

Body Diode Reverse Recovery Charge

—

28.1

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.