MPF930 datasheet(1/4 Pages) ONSEMI

tên linh kiện	MPF930

Giải thích chi tiết về linh kiện	N?묬hannel TMOS Switching

PDF	4 Pages

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nhà sản xuất	ONSEMI [ON Semiconductor]

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August, 2006 − Rev. 4

1

Publication Order Number:

MPF930/D

MPF930

TMOS Switching

N−Channel — Enhancement

MAXIMUM RATINGS

Rating

Symbol MPF930 MPF960 MPF990

Unit

Drain−Source Voltage

VDS

35

60

90

Vdc

Drain−Gate Voltage

VDG

35

60

90

Vdc

Gate−Source Voltage

— Continuous

— Non−repetitive

(tp ≤ 50 μs)

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current

Continuous(1)

Pulsed(2)

ID

IDM

2.0

3.0

Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD

1.0

8.0

W

mW/°C

Operating and Storage

Junction

Temperature Range

TJ, Tstg

−55 to 150

°C

Thermal Resistance

θJA

125

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0, ID = 10 μAdc)

MPF930

MPF960

MPF990

V(BR)DSX

35

60

90

—

Vdc

Gate Reverse Current (VGS = 15 Vdc, VDS = 0)

IGSS

—

50

nAdc

ON CHARACTERISTICS(2)

Zero−Gate−Voltage Drain Current

(VDS = Maximum Rating, VGS = 0)

IDSS

—

10

μAdc

Gate Threshold Voltage

(ID = 1.0 mAdc, VDS = VGS)

VGS(Th)

1.0

—

3.5

Vdc

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 0.5 Adc)

MPF930

MPF960

MPF990

(ID = 1.0 Adc)

MPF930

MPF960

MPF990

(ID = 2.0 Adc)

MPF930

MPF960

MPF990

VDS(on)

—

0.4

0.6

0.9

1.2

2.2

2.8

0.7

0.8

1.2

1.4

1.7

2.4

3.0

3.5

4.8

Vdc

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

http://onsemi.com

CASE 29−05, STYLE 22

TO−92 (TO−226AE)

1

2

3

3 DRAIN

1 SOURCE

2

GATE

Số phần tương tự - MPF930

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	MPF930	83Kb / 4P	TMOS Switching
New Jersey Semi-Conduct...	MPF930	87Kb / 2P	TMOS Switching

More results

Mô tả tương tự - MPF930

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	BS107	76Kb / 4P	TMOS Switching(N-Channel-Enhancement)
	BS170	77Kb / 4P	TMOS FET Switching(N-Channel-Enhancement)
	MPF930	83Kb / 4P	TMOS Switching
	2N6659	441Kb / 3P	TMOS SWITCHING FET TRANSISTORS
ON Semiconductor	MMBF5484LT1	148Kb / 6P	JFET Transistor N?묬hannel February, 2006 ??Rev. 3
ON Semiconductor	MPF4392	75Kb / 6P	JFET Switching Transistors N?묬hannel ??Depletion January, 2006 ??Rev. 5
New Jersey Semi-Conduct...	2N6659	156Kb / 1P	TMOS SWITCHING TRANSISTOR
New Jersey Semi-Conduct...	MPF990	87Kb / 2P	TMOS Switching
ON Semiconductor	MTD20N06V	176Kb / 7P	N?묬hannel DPAK May, 2013 ??Rev. 5
ON Semiconductor	MTP5N40E	261Kb / 10P	N?묬hannel Enhancement August, 2006 ??Rev. 2

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