MGSF3442XT3 datasheet(1/4 Pages) ONSEMI

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May, 2013 − Rev. 2

1

Publication Order Number:

MGSF3442XT1/D

MGSF3442XT1

Preliminary Information

Low RDS(on) Small-Signal

MOSFETs Single N-Channel

Field Effect Transistors

These miniature surface mount MOSFETs utilize the High Cell

Density, HDTMOS process. Low rDS(on) assures minimal power loss

and conserves energy, making this device ideal for use in small power

management circuitry. Typical applications are dc−dc converters,

power management in portable and battery−powered products such as

computers, printers, PCMCIA cards, cellular and cordless telephones.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature TSOP 6 Surface Mount Package Saves Board Space

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

20

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 8.0

Vdc

Drain Current − Continuous @ TA = 25°C

Drain Current − Pulsed Drain Current (tp ≤

10 μs)

ID

IDM

1.7

20

A

Total Power Dissipation @ TA = 25°C

PD

400

mW

Operating and Storage Temperature Range

TJ, Tstg − 55 to

150

°C

Thermal Resistance − Junction−to−Ambient

RθJA

300

°C/W

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MGSF3442XT1

7″

8 mm embossed tape

3000

MGSF3442XT3

13″

8 mm embossed tape

10,000

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

http://onsemi.com

N−CHANNEL

ENHANCEMENT−MODE

MOSFET

RDS(on) = 58 mΩ (TYP)

CASE 318G−02, Style 1

TSOP 6 PLASTIC

D

G

D

S

DRAIN

3

GATE

SOURCE

4

6

5

2

1

Số phần tương tự - MGSF3442XT3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	MGSF3442XT1	86Kb / 4P	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
VBsemi Electronics Co.,...	MGSF3442XT1G	476Kb / 9P	N-Channel 30 V (D-S) MOSFET

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	J210	100Kb / 12P	N-channel field-effect transistors 1997 Dec 01
	PMBF5484	96Kb / 10P	N-channel field-effect transistors April 1995
	PMBFJ210	100Kb / 12P	N-channel field-effect transistors 1997 Dec 01
Motorola, Inc	MMBF2201PT1	132Kb / 6P	LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
Motorola, Inc	MGSF3441XT1	94Kb / 4P	Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
New Jersey Semi-Conduct...	2N4445	69Kb / 1P	N-Channel Field Effect Transistors
Quanzhou Jinmei Electro...	BFR30-31_2015	83Kb / 12P	N-channel field-effect transistors
Quanzhou Jinmei Electro...	BFR30-31	83Kb / 12P	N-channel field-effect transistors
ON Semiconductor	MGSF3454XT1	156Kb / 6P	Small-Signal MOSFETs Single N-Channel Field Effect Transistors May, 2013 ??Rev. 1
ON Semiconductor	MGSF3455XT1	125Kb / 4P	Small-Signal MOSFETs Single P-Channel Field Effect Transistors May, 2013 ??Rev. 2

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