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Publication Order Number :

LE25S40FD/D

© Semiconductor Components Industries, LLC, 2014

November 2014 - Rev. P0

ORDERING INFORMATION

See detailed ordering and shipping information on page 22 of this data sheet.

www.onsemi.com

LE25S40FD

Overview

The LE25S40FD is a SPI bus flash memory device with a 4M bit (512K

 8-

bit) configuration. It uses a single 1.8V power supply. While making the

most of the features inherent to a serial flash memory device, the

LE25S40FD is housed in an 8-pin ultra-miniature package. All these features

make this device ideally suited to storing program in applications such as

portable information devices, which are required to have increasingly more

compact dimensions. The LE25S40FD also has a small sector erase

capability which makes the device ideal for storing parameters or data that

have fewer rewrite cycles and conventional EEPROMs cannot handle due to

insufficient capacity.

Features

 Read/write operations enabled by single 1.8V power supply: 1.65 to 1.95V supply voltage range

 Operating frequency

: 40MHz

 Temperature range

:

40 to 85C

 Serial interface

: SPI mode 0, mode 3 supported

 Sector size

: 4K bytes/small sector, 64K bytes/sector

 Small sector erase, sector erase, chip erase functions

 Page program function (256 bytes / page)

 Block protect function

 Highly reliable read/write

Number of rewrite times : 100,000 times

Small sector erase time : 40ms (typ), 150ms (max)

Sector erase time

: 80ms (typ), 250ms (max)

Chip erase time

: 300ms (typ), 3.0s (max)

Page program time

: 6.0ms/256 bytes (typ), 8.0ms/256 bytes (max)

 Status functions

: Ready/busy information, protect information

 Data retention period

: 20 years

 Package

: VSOIC8 NB

CMOS LSI

4M-bit (512K x 8)

Serial Flash Memory

Advance Information

VSOIC8 NB

* This product is licensed from Silicon Storage Technology, Inc. (USA).

This document contains information on a new product. Specifications and information

herein are subject to change without notice.