TF262TH

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2

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Gate to Drain Breakdown Voltage

V(BR)GDO

IG=--100µA

--20

V

Cutoff Voltage

VGS(off)

VDS=2V, ID=1µA

--0.2

--0.5

--1.0

V

Drain Current

IDSS

VDS=2V, VGS=0V

140*

350*

µA

Forward Transfer Admittance

| yfs |

VDS=2V, VGS=0V, f=1kHz

0.5

0.95

mS

Input Capacitance

Ciss

VDS=2V, VGS=0V, f=1MHz

3.5

pF

Reverse Transfer Capacitance

Crss

VDS=2V, VGS=0V, f=1MHz

0.65

pF

[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]

Voltage Gain

GV

VIN=10mV, f=1kHz

--1.5

dB

Reduced Voltage Characteristic

DGVV

VIN=10mV, f=1kHz, VCC=2.0V → 1.5V

--0.8

--2.0

dB

Frequency Characteristic

DGvf

f=1kHz to 110Hz

--1.0

dB

Total Harmonic Distortion

THD

VIN=30mV, f=1kHz

0.5

%

Output Noise Voltage

VNO

VIN=0V, A Curve

--112

dB

*:TheTF262THisclassifiedbyIDSS as follows : (unit : µA)

Marking

L4

L5

Rank

4

5

IDSS

140 to 240

210 to 350

Test Circuit

OSC

5pF

+33

µ

F

2.2kΩ

VCC=2.0V

VCC=1.5V

V

Voltage gain

Frequency Characteristic

Distortion

Reduced Voltage Characteristic

VTVM

THD

ID -- VDS

Drain to Source Voltage, VDS -- V

ID -- VGS

Gate to Source Voltage, VGS -- V

04

5

12

3

300

200

250

100

50

150

350

250

50

150

0

IT16225

--0.1V

--0.2V

--0.3V

--0.4V

--0.8

--0.6

--0.4

--0.2

--0.1

0

--0.7

--0.5

--0.3

400

300

200

100

0

VGS=0V

IT16226

VDS=2V

150

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.