MTP30P06V

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5

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

0

0.2

0.4

0.6

0.8

1

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

1

10

100

Figure 10. Diode Forward Voltage versus Current

0

10

20

30

40

60

0

5

10

15

30

1000

100

10

1

9

7

5

0

10

8

6

4

30

15

12

9

6

3

0

3

2

1

50

18

21

24

27

Q2

Q3

QT

Q1

20

25

1.2

1.4

1.6

1.8

2

2.2

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define the

maximum simultaneous drain−to−source voltage and drain

current that a transistor can handle safely when it is forward

biased. Curves are based upon maximum peak junction

repetitive pulsed power limits are determined by using the

thermal response data in conjunction with the procedures

discussed in AN569, “Transient Thermal Resistance−General

Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

power averaged over a complete switching cycle must not

A Power MOSFET designated E−FET can be safely used

in switching circuits with unclamped inductive loads. For

reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less

than the rated limit and adjusted for operating conditions

differing from those specified. Although industry practice is

to rate in terms of energy, avalanche energy capability is not

a constant. The energy rating decreases non−linearly with an

increase of peak current in avalanche and peak junction

temperature.

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

custom. The energy rating must be derated for temperature

as shown in the accompanying graph (Figure 12). Maximum

assumed to equal the values indicated.