MMDF2C02ER2 datasheet(1/10 Pages) ONSEMI

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August, 2006 − Rev. 8

1

Publication Order Number:

MMDF2C02E/D

MMDF2C02E

Power MOSFET

2.5 Amps, 25 Volts

Complementary SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOS

t

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

25

Vdc

Gate−to−Source Voltage

VGS

± 20

Vdc

Drain Current − Continuous N−Channel

P−Channel

− Pulsed

N−Channel

P−Channel

ID

IDM

3.6

2.5

18

13

Adc

Operating and Storage Temperature Range

TJ and

Tstg

− 55

to 150

°C

Total Power Dissipation @ TA= 25°C (Note 2)

PD

2.0

Watts

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A,

L = 6.0 mH, RG = 25 Ω)N−Channel

(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A,

L = 10 mH, RG = 25 Ω)P−Channel

EAS

245

mJ

Thermal Resistance − Junction to Ambient

(Note 2)

RθJA

62.5

°C/W

Maximum Lead Temperature for Soldering,

0.0625″ from case. Time in Solder Bath is

10 seconds.

TL

260

°C

1. Negative signs for P−Channel device omitted for clarity.

2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with

one die operating, 10 sec. max.

N−Source

1

2

3

4

8

7

6

5

Top View

N−Gate

P−Source

P−Gate

N−Drain

P−Drain

Device

Package

Shipping†

ORDERING INFORMATION

MMDF2C02ER2

SO−8

2500 Tape & Reel

D

S

G

P−Channel

D

S

G

N−Channel

SO−8

CASE 751

STYLE 14

MARKING

DIAGRAM

PIN ASSIGNMENT

2.5 AMPERES, 25 VOLTS

RDS(on) = 100 mW (N−Channel)

RDS(on) = 250 mW (P−Channel)

http://onsemi.com

1

8

F2C02

ALYW

1

8

A

= Assembly Location

L

= Wafer Lot

Y

= Year

W

= Work Week

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

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