NTP8G206N datasheet(2/6 Pages) ONSEMI

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NTP8G206N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS =0V, ID =1mA

600

Drain−to−Source Leakage Current

IDSS

VDS = 600 V, VGS =0V

TJ =25°C

2.5

TJ = 150°C

8.0

Gate−to−Source Leakage Current

IGSS

VGS = ±18 V

±100

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID = 500 mA

1.6

2.1

2.6

Static Drain-to-Source On Resistance

RDS(on)

VGS =8V, ID = 11 A, TJ =25°C

150

180

VGS =8V, ID = 11 A, TJ = 175°C

340

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

VDS = 480 V, VGS = 0 V, f = 1 MHz

760

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

5.0

Effective output capacitance, energy

related (Note 3)

Co(er)

VGS = 0 V, VDS = 0 to 480 V

Effective output capacitance, time

related (Note 4)

Co(tr)

ID = constant, VGS = 0 V,

VDS = 0 to 480 V

105

Total Gate Charge

VDS = 100 V, ID = 11 A, VGS = 4.5 V

6.2

9.3

Gate-to-Source Charge

Qgs

2.1

Gate-to-Drain Charge

Qgd

2.2

SWITCHING CHARACTERISTICS (Note 2)

Turn-on Delay Time

td(on)

VDD = 480 V, ID =11A,

VGS =10V, RG = 2 W

6.2

Rise Time

4.5

Turn-off Delay Time

td(off)

9.7

Fall Time

4.0

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

IS = 11 A, VGS =0V

TJ =25°C

2.2

Reverse Recovery Time

trr

VGS =0V, VDD = 400 V

IS = 11 A, di/dt = 2000 A/ms

Reverse Recovery Charge

Qrr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperatures.

3. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

4. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

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