61614 TKIM TC-00003133 No. A2227-1/5

Semiconductor Components Industries, LLC, 2014

June, 2014

http://onsemi.com

PCP1302

Features

• 4V drive

• Halogen free compliance

• Protection Diode in

Specifications

Absolute Maximum Ratings at Ta = 25

°C

Parameter

Symbol

Conditions

Value

Unit

Drain to Source Voltage

VDSS

−60

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

−3A

Drain Current (Pulse)

IDP

PW

≤10μs, duty cycle≤1%

−12

A

Power Dissipation

PD

Tc=25

°C

3.5

W

When mounted on ceramic substrate (600mm

1.3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

− 55 to +150

°C

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Case Steady State

R

35.7

°C /W

Junction to Ambient

R

96.1

°C /W

When mounted on ceramic substrate (600mm

Electrical Characteristics at Ta

= 25°C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=−1mA, VGS=0V

−60

V

Zero-Gate Voltage Drain Current

IDSS

VDS=−60V, VGS=0V

−1

μA

Gate to Source Leakage Current

IGSS

VGS=±20V, VDS=0V

±10

μA

Gate Threshold Voltage

VGS(th)

VDS=−10V, ID=−1mA

−1.2

−2.6

V

Forward Transconductance

gFS

VDS=−10V, ID=−1.5A

3.2

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=−1.5A, VGS=−10V

200

266

m

Ω

RDS(on)2

ID=−1A, VGS=−4.5V

245

334

m

Ω

RDS(on)3

ID=−1A, VGS=−4V

260

374

m

Ω

Input Capacitance

Ciss

VDS=−20V, f=1MHz

262

pF

Output Capacitance

Coss

29

pF

Reverse Transfer Capacitance

Crss

19

pF

Continued on next page.

P-Channel Power MOSFET

−60V, −3A, 266mΩ, Single PCP

Ordering number : ENA2227

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of this data sheet.