Publication Order Number:

MMSF2P02E/D

© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 6

1

MMSF2P02E

Preferred Device

Power MOSFET

2 Amps, 20 Volts

P−Channel SO−8

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOS

t

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

Life

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

20

Vdc

Gate−to−Source Voltage − Continuous

± 20

Vdc

Drain Current

2.5

1.7

13

Adc

Apk

(Note 2.)

2.5

Watts

Operating and Storage Temperature Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

216

mJ

Thermal Resistance − Junction to Ambient

(Note 2.)

50

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

10 sec. max.

D

S

G

P−Channel

N−C

1

2

3

4

8

7

6

5

Top View

Source

Source

Gate

Drain

Drain

Drain

Drain

1

8

2 AMPERES

20 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MMSF2P02ER2

SO−8

2500 Tape & Reel

SO−8

CASE 751

STYLE 13

http://onsemi.com

LYWW

MARKING

DIAGRAM

S4P01

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.