MMFT3055VT1G datasheet(2/7 Pages) ONSEMI

2 / 7 page

MMFT3055V

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(Cpk ≥ 2.0) (Note 3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

100

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(Cpk ≥ 2.0) (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.8

5.6

4.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance

(Cpk ≥ 2.0) (Note 3)

(VGS = 10 Vdc, ID = 0.85 Adc)

RDS(on)

−

0.115

0.13

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 1.7 Adc)

(VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C)

VDS(on)

−

0.27

0.25

Vdc

Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc)

gFS

1.0

2.7

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

360

500

Output Capacitance

Coss

−

110

150

Transfer Capacitance

Crss

−

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc, RG = 9.1 W)

td(on)

−

8.0

Rise Time

−

9.0

Turn−Off Delay Time

td(off)

−

Fall Time

−

Gate Charge

(VDS = 48 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc)

−

2.0

−

5.0

−

4.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1)

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

0.85

0.7

1.6

−

Vdc

Reverse Recovery Time

(IS = 1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

6.0

−

Reverse Recovery Stored Charge

QRR

−

0.089

−

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

−

4.5

−

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

−

7.5

−

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

3. Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

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