| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
MMDF2C02HD bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
MMDF2C02HD bảng dữ liệu(HTML) 1 Page - ON Semiconductor |
|
1 / 13 page ![]() © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 7 1 Publication Order Number: MMDF2C02HD/D MMDF2C02HD Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • Avalanche Energy Specified • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage VGS ± 20 Vdc Drain−to−Gate Voltage (RGS = 1.0 mΩ) VDGR 20 Vdc Drain Current − Continuous N−Channel P−Channel − Pulsed N−Channel P−Channel ID IDM 3.8 3.3 19 20 A Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Total Power Dissipation @ TA= 25°C (Note 2.) PD 2.0 Watts Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A, L = 10 mH, RG = 25 Ω)N−Channel (VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A, L = 18 mH, RG = 25 Ω)P−Channel EAS 405 324 mJ Thermal Resistance − Junction to Ambient (Note 2.) RθJA 62.5 °C/W Maximum Lead Temperature for Soldering, 0.0625″ from case. Time in Solder Bath is 10 seconds. TL 260 °C 1. Negative signs for P−Channel device omitted for clarity. 2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. N−Source 1 2 3 4 8 7 6 5 Top View N−Gate P−Source P−Gate N−Drain N−Drain P−Drain P−Drain 2 AMPERES 20 VOLTS RDS(on) = 90 mW (N−Channel) RDS(on) = 160 mW (P−Channel) Device Package Shipping ORDERING INFORMATION MMDF2C02HDR2 SO−8 2500 Tape & Reel http://onsemi.com D S G P−Channel D S G N−Channel SO−8, Dual CASE 751 STYLE 14 LYWW MARKING DIAGRAM D2C02 D2C02 = Device Code L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT 1 8 Preferred devices are recommended choices for future use and best overall value. |
Số phần tương tự - MMDF2C02HD |
|
Mô tả tương tự - MMDF2C02HD |
|
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |