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ISO5451DW bảng dữ liệu(PDF) 25 Page - Texas Instruments

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tên linh kiện ISO5451DW
Giải thích chi tiết về linh kiện  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
PDF  38 Pages
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Trang chủ  http://www.ti.com
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ISO5451DW bảng dữ liệu(HTML) 25 Page - Texas Instruments

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DESAT
GND2
VCC2
15V
1 F
DDST
VEE2
220 pF
CLAMP
3
1,8
5
4
6
2
7
15V
1 F
RG
NC
OUT
ISO5451
VFW
RS
VFW-Inst
15
9, 16
11
10
12
13
14
IN-
IN+
RDY
10k
10k
VCC1
0.1 F
GND1
3V - 5V
10R
ISO5451
C
15
9, 16
11
10
12
13
14
IN-
IN+
RDY
10k
10k
VCC1
0.1 F
GND1
3V - 5V
10R
ISO5451
C
FLT
RST
FLT
RST
ISO5451
www.ti.com
SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015
10.2.2.6 Auto-Reset
In this case, the gate control signal at IN+ is also applied to the RST input to reset the fault latch every switching
cycle. Incorrect RST makes output go low. A fault condition, however, the gate driver remains in the latched fault
state until the gate control signal changes to the 'gate low' state and resets the fault latch.
If the gate control signal is a continuous PWM signal, the fault latch will always be reset before IN+ goes high
again. This configuration protects the IGBT on a cycle by cycle basis and automatically resets before the next
'on' cycle.
Figure 47. Auto Reset for Non-inverting and Inverting Input Configuration
10.2.2.7 DESAT Pin Protection
Switching inductive loads causes large instantaneous forward voltage transients across the freewheeling diodes
of IGBTs. These transients result in large negative voltage spikes on the DESAT pin which draw substantial
current out of the device. To limit this current below damaging levels, a 100-
Ω to 1-kΩ resistor is connected in
series with the DESAT diode.
Further protection is possible through an optional Schottky diode, whose low forward voltage assures clamping of
the DESAT input to GND2 potential at low voltage levels.
Figure 48. DESAT Pin Protection with Series Resistor and Schottky Diode
Copyright © 2015, Texas Instruments Incorporated
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