MGSF3442VT1 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MGSF3442VT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)

IDSS

−

1.0

5.0

µAdc

Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

0.6

−

Vdc

Static Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 4.0 A)

(VGS = 2.5 Vdc, ID = 3.4 A)

rDS(on)

−

0.058

0.072

0.070

0.095

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

−

Output Capacitance

(VDS = 5.0 V)

Coss

−

Transfer Capacitance

(VDG = 5.0 V)

Crss

−

SWITCHING CHARACTERISTICS (Note 2.)

Turn−On Delay Time

td(on)

−

8.0

Rise Time

(VDD = 10 Vdc, ID = 1.0 A,

−

Turn−Off Delay Time

(VDD

10 Vdc, ID

1.0 A,

VGEN = 10 V, RL = 10 Ω)

td(off)

−

Fall Time

−

Gate Charge

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

−

1.0

Pulsed Current

ISM

−

5.0

Forward Voltage (Note 2.)

VSD

−

1.2

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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