NCP4547IMNTWG datasheet(4/10 Pages) ONSEMI

4 / 10 page

NCP4547

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

MOSFET

On−Resistance

VCC = 5.0 V; VIN = 1.8 V

RON

4.7

6.1

VCC = 5.0 V; VIN = 5.0 V

4.9

6.3

VCC = 3.3 V; VIN = 1.8 V

5.1

6.5

VCC = 3.3 V; VIN = 5.0 V

5.7

7.1

Leakage Current (Note 6)

VEN = 0 V; VPOL = VCC; VIN = 6 V

ILEAK

0.03

1.0

CONTROLLER

Supply Standby Current (Note 7)

VEN = 0V; VPOL = VCC = 5.5 V

ISTBY

5.0

Supply Dynamic Current (Note 8)

VEN = VPOL = VCC

IDYN

250

500

Bleed Resistance

RBLEED

100

200

Input High Voltage − EN & POL

VIH

2.0

Input Low Voltage − EN & POL

VIL

0.8

Pull Down Resistance − EN

RPD

100

180

Pull Up Resistance − POL

RPU

100

180

6. Average current from VIN to VOUT with MOSFET turned off.

7. Average current from VCC to GND with MOSFET turned off.

8. Average current from VCC to GND after charge up time of MOSFET.

SWITCHING CHARACTERISTICS (TJ = 25°C unless otherwise specified, Note 9)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

VCC = 5.0 V, VIN = 1.8 V

Output Slew Rate

RL = 10 W, CL = 0.1 mF

8.2

kV/s

Output Turn−on Delay

RL = 10 W, CL = 0.1 mF

TON

600

Output Turn−off Delay

RL = 10 W, CL = 0.1 mF

TOFF

2.5

VCC = 3.3 V, VIN = 5.0 V

Output Slew Rate

RL = 10 W, CL = 0.1 mF

4.3

kV/s

Output Turn−on Delay

RL = 10 W, CL = 0.1 mF

TON

1300

Output Turn−off Delay

RL = 10 W, CL = 0.1 mF

TOFF

1.1

9. See below figure for Test Circuit and Timing Diagrams.

POL

NCP4547

DELAY

GND

BLEED

OFF ON

10%

90%

SR = DV

VEN

50%

10%

90%

Figure 3. Test Circuit and Timing Diagrams

VOUT

TON

TOFF

VOUT

VIN

VCC

VOUT

NCP4547IMNTWG bảng dữ liệu(PDF) 4 Page - ON Semiconductor

NCP4547IMNTWG bảng dữ liệu(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL