ACE1106M datasheet(3/7 Pages) ACE

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ACE1106M

N-Channel 60-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 48 V, VGS = 0 V

VDS = 48 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

110

Drain-Source On-Resistance

rDS(on)

VGS = 10 V, ID = 30A

mΩ

VGS = 4.5 V, ID = 20A

Forward Transconductance

gfs

VDS = 15 V, ID = 20 A

Diode Forward Voltage

VSD

IS = 55A, VGS = 0 V

1.1

Dynamic

Total Gate Charge

VDS = 30 V, VGS = 4.5 V, ID = 20 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 1.5 Ω , ID = 20 A,

VGEN = 10 V, RGEN = 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

174

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f =1 MHz

9289

Output Capacitance

Coss

572

ReverseTransfer Capacitance

Crss

555

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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