UPF1N50 datasheet(2/3 Pages) MICROSEMI

2 / 3 page

Microsemi

Watertown Division

580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: 617-924-1235

Page 2

 2000

MSC1541.PDF 2000-08-08

W A T E R T O W N DI V I S I ON

UPF1N50

SURFACE MOUNT N CHANNEL MOSFET

PRELIMINARY

STATIC EL ECTRICA L CH

STATIC EL ECTRICA L CH ARACT ERIS TIC S

ARACT ERIS TIC S

UPF1N50

SYMBOL

CHARACTERISTICS / TEST CONDITIONS

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

(VGS=0V, ID=0.25mA)

500

Volts

VGS(TH)2

Gate Threshold Voltage

(VDS

≥VGS, ID=1mA, TJ=37°C )

2.0

3.4

4.0

Volts

VGS(TH)1

Gate Threshold Voltage

(VDS

≥VGS, ID=1mA, TJ=25°C )

3.5

Volts

RDS(ON)1

Drain to Source ON-State Resistance

(VGS=10V, ID=1.0A , TJ=25

°C )

2.7

3.5

Ohms

IDSS1

Zero Gate Voltage-Drain Current

(VDS=400V,VGS=0V,TJ= 25

°C )

IDSS2

Zero Gate Voltage-Drain Current

(VDS=400V,VGS=0V,TJ=125

°C )

250

IGSS1

Gate to Source Leakage Current

(VGS=

±20V, VDS=0V, TJ = 25°C )

±100

STATIC EL ECTRICA L CH

STATIC EL ECTRICA L CH ARACT ERIS TIC S

ARACT ERIS TIC S

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Min

Typ

Max

UNIT

Ciss

Coss

Input Capacitance

Output Capacitance

VGS= 0 V

VDS= 50 V

200

250

Crss

Reverse Transfer Capacitance

f = 1MHZ

Qgs

Qgd

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS= 10 V

VDS= 0.5 VDSS

ID= 10 mA

1.0

td (on)

Turn-ON Delay Time

Resistive Switching (25

°C)

Rise Time

VGS= 10 V, VDS= 0.5 BVDSS

Turn-OFF Delay Time

ID = 20 mA

Fall Time

Rg = 1.6

Ω

VSD

Diode Forward Voltage

VGS= 0 V, IS = 1 A, TJ = 25

°C

0.85

1.2

trr

Reverse Recovery Time

IS = 1 A, dIs/dt = 100 A/us

150

Qrr

Reverse Recovery Charge

IS = 1 A, dIs/dt = 100 A/us

0.8

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