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NTS1545EMFST1G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện NTS1545EMFST1G
Giải thích chi tiết về linh kiện  Exceptionally Low Leakage Trench-based Schottky Rectifier
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NTS1545EMFS, NRVTS1545EMFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
15
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 164°C)
IFRM
30
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
210
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
EAS
100
mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
1.3
−
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5.0 Amps, TJ = 25°C)
(iF = 7.5 Amps, TJ = 25°C)
(iF = 15 Amps, TJ = 25°C)
(iF = 5.0 Amps, TJ = 125°C)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
vF
0.44
0.46
0.50
0.33
0.36
0.43
−
−
0.60
−
−
0.53
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
−
15
50
20
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.



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