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MMDF4207 bảng dữ liệu(PDF) 3 Page - ON Semiconductor

tên linh kiện MMDF4207
Giải thích chi tiết về linh kiện  Dual P-Channel Field Effect Transistors
PDF  11 Pages
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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MMDF4207 bảng dữ liệu(HTML) 3 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage(1)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
−
−
14.9
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)
IDSS
−
−
−
−
1.0
5.0
μAdc
Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IGSS
−
−
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage(1)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
−
−
−2.6
−
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance(1)
(VGS = 4.5 Vdc, ID = 6.2 Adc)
(VGS = 2.5 Vdc, ID = 5.0 Adc)
RDS(on)
−
−
22
34
33
50
mΩ
Forward Transconductance (VDS = 10 Vdc, ID = 6.2 Adc)(1)
gFS
−
15
−
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
−
1210
1694
pF
Output Capacitance
Coss
−
560
784
Transfer Capacitance
Crss
−
340
476
SWITCHING CHARACTERISTICS(2)
Turn−On Delay Time
(VDS = 10 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)(1)
td(on)
−
14
21
ns
Rise Time
tr
−
20
64
Turn−Off Delay Time
td(off)
−
68
74
Fall Time
tf
−
84
127
Gate Charge
(VDS = 10 Vdc, ID = 6.2 Adc,
VGS = 4.5 Vdc)(1)
QT
−
27
31
nC
Q1
−
4.5
−
Q2
−
11.7
−
Q3
−
9.3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)(1)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
−
−
0.87
0.72
1.2
−
Vdc
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)(1)
trr
−
43
80
ns
ta
−
20
−
tb
−
23
−
Reverse Recovery Stored
Charge
QRR
−
0.04
−
μC
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Repetitive rating; pulse width limited by max. junction temperature.



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