MS2475 datasheet(1/5 Pages) MICROSEMI

tên linh kiện	MS2475

Giải thích chi tiết về linh kiện	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MSC0937A.DOC 10-20-98

MS2475

DESCRIPTION:

The MS2475 is a silicon NPN power transistor designed for IFF

applications. The MS2475 is designed to exceed the high peak

power requirements of today's IFF systems. Hermetic sealing,

gold metalization and internal input matching provide superior

long term reliability and broadband performance.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

VCC

Collector-Supply Voltage*

55

V

IC

Device Current*

(TC

≤≤ 100°°C)

45

A

PDISS

Power Dissipation*

1670

W

TJ

Junction Temperature

+200

°°C

TSTG

Storage Temperature

- 65 to + 200

°°C

Thermal Data

RTH(j-c)

Junction-Case Thermal Resistance*

0.06

°°C/W

* Applies only to rated RF operation.

Features

• DESIGNED FOR HIGH POWER PULSED IFF

• 720 WATTS (min.) IFF 1030 or 1090 MHz

• REFRACTORY GOLD METALLIZATION

• 6.8 dB MIN. GAIN

• LOW THERMAL RESISTANCE FOR RELIABILTY AND

RUGGEDNESS

• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED

OPERATING CONDITIONS

• INPUT MATCHED, COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Số phần tương tự - MS2475

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Advanced Power Technolo...	MS2472	139Kb / 4P	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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MS2475 bảng dữ liệu(PDF) 1 Page - Microsemi Corporation

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Số phần tương tự - MS2475

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