MS2211 datasheet(1/3 Pages) MICROSEMI

tên linh kiện	MS2211

Giải thích chi tiết về linh kiện	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MSC0919.PDF 9-23-98

MS2211

DESCRIPTION:

The MS2211 is designed for specialized avionics applications,

including JTIDS, where power is provided under pulse formats

utilizing short pulse widths and high burst or overall duty cycles.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation *

(TC

≤≤ 75°°C)

25

W

IC

Device Current *

0.9

A

VCC

Collector - Supply Voltage *

32

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°°C

TSTG

Storage Temperature

- 65 to + 200

°°C

Thermal Data

RTH(j-c)

Junction-Case Thermal Resistance *

7.0

°°C/W

* Applies only to rated RF amplifier operation

Features

•• REFRACTORY/GOLD METALLIZATION

•• EMITTER SITE BALLASTED

•• 5:1 VSWR CAPABILITY

•• LOW THERMAL RESISTANCE

•• INPUT/OUTPUT MATCHING

•• OVERLAY GEOMETRY

•• METAL/CERAMIC HERMETIC PACKAGE

•• P

OUT = 6.0 W MIN. WITH 9.3 dB Gain

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Số phần tương tự - MS2211

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CIT Relay & Switch	MS2211L2	124Kb / 1P	CIT SWITCH
CIT Relay & Switch	MS2211L4	124Kb / 1P	CIT SWITCH

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Mô tả tương tự - MS2211

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MS2211 bảng dữ liệu(PDF) 1 Page - Microsemi Corporation

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Số phần tương tự - MS2211

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