SSF3620_15 datasheet(2/6 Pages) GOOD-ARK

2 / 6 page

www.goodark.com

Page 2 of 6

Rev.2.0

SSF3620

30V Dual N-Channel MOSFET

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.5

VGS=4.5V, ID=3.5A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=7A

18.5

mΩ

Forward Transconductance

gFS

VDS=5V,ID=11A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

600

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDS=15V,VGS=10V,RGEN=6Ω

ID=1A

Total Gate Charge

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

VDS=15V,ID=7A,VGS=10V

3.8

Body Diode Reverse Recovery Time

Trr

Body Diode Reverse Recovery Charge

Qrr

IF=7A, dI/dt=100A/µs

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=3A

0.7

1.2

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in

2 FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

SSF3620 bảng dữ liệu(PDF) 2 Page - GOOD-ARK Electronics

SSF3620 bảng dữ liệu(HTML) 2 Page - GOOD-ARK Electronics

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL