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2N6303 bảng dữ liệu(PDF) 1 Page - Microsemi Corporation

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Giải thích chi tiết về linh kiện  Silicon PNP Power Transistors
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nhà sản xuất  MICROSEMI [Microsemi Corporation]
Trang chủ  http://www.microsemi.com
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MSC1062.PDF 05-25-99
2N6303
ABSOLUTE MAXIMUM RATI
ABSOLUTE MAXIMUM RATINGS:
NGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
VCEO*
Collector-Emitter Voltage
- 80
Vdc
VCB*
Collector-Base Voltage
- 80
Vdc
VEB*
Emitter-Base Voltage
- 4.0
Vdc
IC*
Peak Collector Current
10
Adc
IC*
Continuous Collector Current
3.0
Adc
IB*
Base Current
0.5
Adc
TSTG*
Storage Temperature
-65 to 200
°°C
TJ*
Operating Junction Temperature
-65 to 200
°°C
PD*
Total Device Dissipation
TC = 25°°C
Derate above 25
°°C
6.0
34.3
Watts
mW/
°°C
PD*
θθ JC
Total Device Dissipation
TA = 25°°C
Derate above 25
°°C
Thermal Resistance
Junction to Case
Junction to Ambient
1.0
5.71
29
175
Watts
mW/
°°C
°°C/W
°°C/W
Silicon PNP Power
Transistors
TO-5
APPLICATIONS:
•
High-Speed Switching
•
Medium-Current Switching
•
High-Frequency Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200
°°C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
*
Indicates JEDEC registered data.
FEATURES:
•
Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)
•
DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc
•
Low Collector-Emitter Saturation Voltage:
VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc
•
High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)


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