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SSF2N60 bảng dữ liệu(PDF) 1 Page - GOOD-ARK Electronics |
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SSF2N60 bảng dữ liệu(HTML) 1 Page - GOOD-ARK Electronics |
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1 / 7 page ![]() SSF2N60 600V N-Channel MOSFET www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits Description Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 2 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 1.3 IDM Pulsed Drain Current② 8 A Power Dissipation③ 54 W PD @TC = 25°C Linear Derating Factor 0.43 W/°C VDS Drain-Source Voltage 600 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=55mH 110 mJ IAS Avalanche Current @ L=55mH 2 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A TO-220 Marking and Pin Assignment Schematic Diagram Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. |
Số phần tương tự - SSF2N60_15 |
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Mô tả tương tự - SSF2N60_15 |
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