SB160L-SMA-R datasheet(2/3 Pages) UTC

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SB160

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R601-066.e



ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Repetitive Peak Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

RMS Reverse Voltage

VR(RMS)

DC Blocking Voltage

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

Average Rectified Output Current

1.0

TA= 25°C

0.5

Peak Reverse Current at Rated DC

Blocking Voltage

TA= 100°C

IRM

5.0

Operating Temperature

-65~+150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOD-123

200

°C/W

SMA

°C/W

Junction to Ambient

DO-41

θJA

°C/W

Note: Measured at ambient temperature at a distance of 9.5mm from the case.



ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage

V(BR)R

IR=0.50mA

Forward Voltage Drop

VFM

IF=1.0A

0.7

TA=25°C

500

μA

Peak Reverse Current at Rated DC Blocking Voltage

IRM

TA=100°C

5.0

Notes: 1. Pulse width ≤ 300μs, duty cycle ≤ 2%.

2. Short duration test pulse used to minimize self-heating effect.

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