SIS782DN datasheet(3/14 Pages) TFUNK

3 / 14 page

Document Number: 67954

S11-1177-Rev. A, 13-Jun-11

www.vishay.com

Vishay Siliconix

SiS782DN

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

Pulse Diode Forward Currenta

ISM

Body Diode Voltage

VSD

IS = 2 A

0.44

0.55

Body Diode Reverse Recovery Time

trr

IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

7.5

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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