MBR1100G-Z41-R datasheet(2/3 Pages) UTC

2 / 3 page

MBR1100

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R601-270.b



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

100

Working Peak Reverse Voltage

VRWM

100

Repetitive Peak Reverse Voltage

VRRM

100

Maximum RMS Reverse Voltage

VR(RMS)

Average Forward Rectified Output Current

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half-Sine-Wave

IFSM

Voltage Rate of Change (Rated VR)

dv/dt

V/ns

Operating Junction Temperature (Note 1)

-65~+150

°C

Storage Temperature (Note 1)

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W



ELECTRICAL CHARACTERISTICS (Note 2) (TA=25°C, unless otherwise noted.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

IF=1A, TL=25°C

0.79

Instantaneous Forward Voltage (Note 2)

IF=1A, TL=100°C

0.69

TL=25°C

μA

Instantaneous Reverse Current @ Rated dc

Voltage (Note 2)

TL=100°C

5.0

Notes: 1. The heat generated must be less than the thermal conductivity from Junction to Ambient: PD/TJ<1/θJA.

2. Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.

MBR1100G-Z41-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

MBR1100G-Z41-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3

bảng dữ liệu tải về

Link URL