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BAW56G-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện BAW56G-AE3-R
Giải thích chi tiết về linh kiện  DUAL SURFACE MOUNT SWITCHING DIODE
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BAW56G-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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BAW56
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R601-269.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Repetitive Peak Reverse Voltage
VRRM
75
V
Working Peak Reverse Voltage
VRWM
75
V
DC Blocking Voltage
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current (Note 2)
IFM
300
mA
Average Rectified Output Current
IO
150
mA
Non-Repetitive Peak Forward Surge Current
t=1.0µs
IFSM
2.0
A
t=1.0s
1.0
Power Dissipation (Note 2)
PD
350
mW
Junction Temperature
TJ
-65 ~ +150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
θJA
357
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Reverse Breakdown Voltage
VBR(R)
IR = 2.5µA
75
V
Forward Voltage (Note 1, 3)
VF
IF = 1.0mA
0.715
V
IF = 10mA
0.855
V
IF = 50mA
1.0
V
IF = 150mA
1.25
V
Peak Reverse Current (Note 1)
IR
VR = 75V
2.5
µA
VR = 75V, TJ = 150°C
50
µA
VR = 25V, TJ = 150°C
30
µA
VR = 20V
25
nA
Junction Capacitance
CJ
VR = 0, f = 1.0MHz
2.0
pF
Reverse Recovery Time
trr
IF = IR = 10mA, IRR = 0.1 x IR,
RL = 100Ω
4.0
ns
Notes: 1.Short duration test pulse used to minimize self-heating effect.
2. Part mounted on FR-4 PC board with recommended pad layout.
3. Pulse Test: Pulse Width: 300μs, Duty Cycle ≤ 2%.



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