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MGBR2V45L-SMA-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện MGBR2V45L-SMA-R
Giải thích chi tiết về linh kiện  MOS GATED BARRIER RECTIFIER
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nhà sản xuất  UTC [Unisonic Technologies]
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MGBR2V45L-SMA-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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MGBR2V45
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R202-048.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM
45
V
Working Peak Reverse Voltage
VRWM
45
V
Repetitive Peak Reverse Voltage
VRRM
45
V
RMS Reverse Voltage
VR(RMS)
28
V
Average Rectified Output Current
TC=140°C
IO
2.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
50
A
Operating Junction Temperature
TJ
-65~+175
°C
Storage Temperature
TSTG
-65~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
90
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
V(BR)R
IR=0.5mA
45
V
IF=2A, TJ=25°C
0.50
V
Instantaneous Forward Voltage
VFM
IF=2A, TJ=125°C
0.47
V
VR=45V, TJ=25°C
100
μA
Leakage Current (Note 1)
IRM
VR=45V, TJ=125°C
10
mA
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.



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