DSE804

Preliminary

FAST RECOVERY EPITAXIAL DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

VER.a



ABSOLUTE MAXIMUM RATINGS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

400

V

RMS Voltage

280

V

Recurrent Peak Reverse Voltage

400

V

8

A

Peak Forward Surge Current 8.3ms Single Half Sine-Wave

Superimposed on Rated Load (JEDEC Method)

125

A

Operating Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

TO-220-2

3

°C/W

Junction to Case

TO-220F

5

°C/W

Note: Mounted on P.C. Board with 14mm



ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Forward Voltage (Note 1)

1.3

V

1

μA

DC Reverse Current at Rated DC Blocking

Voltage

300

μA

Reverse Recovery Time (Note 2)

50

ns

Junction Capacitance (Note 3)

65

pF

Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle ≤ 2%

3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC