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UTC606PG-AG6-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UTC606PG-AG6-R
Giải thích chi tiết về linh kiện  P-CHANNEL 1.8V TRENCH MOSFET
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UTC606PG-AG6-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UTC606P-H
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-B34.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Drain Current
Continuous (Note 2)
ID
-6
A
Pulsed
IDM
-20
A
Power Dissipation
PD
300
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
380
°C/W
Junction-to-Case
θJC
110
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-12
V
Breakdown Voltage Temperature
Coefficient
J
DSS
T
∆
BV
∆
ID=-250µA, Referenced to 25°C
-3
mV/°
C
Zero Gate Voltage Drain Current
IDSS
VDS=-10V, VGS=0V
-1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+8V, VDS=0V
100
nA
Reverse
VGS=-8V, VDS=0V
-100
nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-0.4
-0.5
-1.5
V
Gate Threshold Voltage Temperature
Coefficient
J
)
th
(
GS
T
∆
BV
∆
ID=-250µA, Referenced to 25°C
2.5
mV/°
C
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-6A
21
26
mΩ
VGS=-2.5V, ID=-5A
26
35
mΩ
VGS=-1.8V, ID=-4A
34
53
mΩ
VGS=-4.5V, ID=-6A, TJ=125°C
28
35
mΩ
On State Drain Current
ID(ON)
VGS=-4.5V, VDS=-5V
-20
A
Forward Transconductance
gFS
VDS=-5V, ID=-6A
25
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-6V, f=1.0MHz
1699
pF
Output Capacitance
COSS
679
pF
Reverse Transfer Capacitance
CRSS
423
pF
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
VGS=-4.5V, VDS=-6V, ID=-6A
18
25
nC
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
4.2
nC
Turn-ON Delay Time
tD(ON)
VGS=-4.5V, VDD=-6V, ID=-1A,
RGEN=6Ω
11
19
ns
Rise Time
tR
10
20
ns
Turn-OFF Delay Time
tD(OFF)
89
142
ns
Fall-Time
tF
70
112
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain–Source
Diode Forward Current
IS
-1.3
A
Drain–Source Diode Forward Voltage
VSD
IS=-1.3A,VGS=0V (Note)
-0.6
-1.2
V
Note: Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2.0%



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