QS8M11G-S08-R datasheet(4/6 Pages) UTC

4 / 6 page

QS8M11

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-B29.a

ELECTRICAL CHARACTERISTICS(Cont.)

P-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-1mA, VGS=0V

-30

Drain-Source Leakage Current

IDSS

VDS=-30V, VGS=0V

-1

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=-10V, ID=-1mA

-1.0

-2.5

Drain-Source On-State Resistance (Note2)

RDS(ON)

VGS=-10V, ID=-3.5A

mΩ

VGS=-4.5V, ID=-1.5A

115

mΩ

VGS=-4.0V, ID=-1.5A

125

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V, VDS=-10V,

f=1.0MHz

480

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

tD(ON)

VDD≈-15V, VGS=-10V,

ID=-1.5A, RG=10Ω,

RL=10Ω

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

Total Gate Charge (Note2)

VGS=-5V, VDD≈-15V,

ID=-3A

5.2

Gate-Source Charge

QGS

1.6

Gate-Drain Charge

QGD

1.6

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

IS=-3A, VGS=0V

-1.2

Continuous Drain-Source Diode Forward Current

-1.0

Pulsed Drain-Source Diode Forward Current

ISM

-12

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤ 300us, duty cycle ≤ 2%.

3. Surface Mounted on 1in

2 pad area, t ≤ 10 sec.

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