5N50K-MT

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-B22.C

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous

5

A

Drain Current

Pulsed (Note 2)

20

A

Avalanche Current (Note 2)

5

A

Single Pulsed (Note 3)

150

mJ

Avalanche Energy

Repetitive (Note 2)

7.3

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

78

W

TO-220F/TO-220F1

TO-220F3

36

W

TO-220F2

29

W

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

54

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

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THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

°C/W

TO-220

1.16

°C/W

TO-220F/TO-220F1

TO-220F3

4.2

°C/W

TO-220F2

4.18

°C/W

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.3

°C/W