4N70K-TA

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-040.B

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

4.0

A

Continuous

4.0

A

Drain Current

Pulsed (Note 2)

17.6

A

Single Pulsed (Note 3)

216

mJ

Avalanche Energy

Repetitive (Note 2)

10.6

mJ

TO-220F/TO-220F1/

TO-220F2/TO-220F3

36

W

TO-251/TO-251S

TO-252/TO-252D

49

W

Power Dissipation

TO-262

106

W

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F/TO-220F1/

TO-220F2/TO-220F3

TO-262

62.5

°C/W

Junction to Ambient

TO-251/TO-251S

TO-252/TO-252D

110

°C/W

TO-220F/TO-220F1

TO-220F3

3.47

°C/W

TO-220F2

3.28

°C/W

TO-251/TO-251S

TO-252/TO-252D

2.55

°C/W

Junction to Case

TO-262

1.18

°C/W