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UTT30NP30G-TN4-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  DUAL POWER MOSFET
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UTT30NP30G-TN4-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

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UTT30NP30
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-A40.b
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDSS
20
-25
V
Gate-Source Voltage
VGSS
±8
±20
V
Drain Current
Continuous
TA=25°C
ID
30
-30
A
Pulsed (Note)
IDM
120
-120
A
Power Dissipation
PD
3.1
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
40
C/W
ELECTRICAL CHARACTERISTICS(TJ=25°C unless otherwise noted)
N-channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
20
V
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V, TJ=25°C
1.0
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+8V, VGS=0V
+100 nA
Reverse
VGS=-8V, VGS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.5
1.2
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=10V, ID=30A
15
mΩ
VGS=4.5V, ID=30A
18
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=20V, f=1.0MHz
1500
pF
Output Capacitance
COSS
260
pF
Reverse Transfer Capacitance
CRSS
260
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=10V, VDS=16V, ID=30A
160 170
nC
Gate to Source Charge
QGS
5.5
nC
Gate to Drain Charge
QGD
10.5
nC
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=10V, ID=1A
VGS=10V, RG=3.3Ω
31
38
nS
Rise Time
tR
57
62
nS
Turn-OFF Delay Time
tD(OFF)
458 510
nS
Fall-Time
tF
234 270
nS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
ISD=30A
0.9 1.25
V



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