UT2P06 datasheet(2/3 Pages) UTC

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UT2P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-B01.B



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-60

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

-2

Pulsed

IDM

-6.03

Avalanche Current (L=0.1mH)

IAR

-7

Power Dissipation (Note 1, 2)

0.3

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface Mounted on FR4 Board.

3. t ≤ 5 sec



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

320

°C/W

Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature.



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VDS=0V

-60

Drain-Source Leakage Current

IDSS

VDS=-60V, VGS=0V

-0.5

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-3

Static Drain-Source On-State Resistance

(Note 1)

RDS(ON)

VGS= -10V, ID= -0.9A

0.4

Ω

VGS= -4.5V, ID= -0.8A

0.6

DYNAMIC PARAMETERS

Input Capacitance (Note 3)

CISS

VGS=0V, VDS=-25V, f=1.0MHz

141

Output Capacitance (Note 3)

COSS

13.1

Reverse Transfer Capacitance (Note 3)

CRSS

10.8

SWITCHING PARAMETERS

(Note 2)

Total Gate Charge (Note 3)

VGS=-10V, VDS=-30V, ID=-0.9A

5.1

Gate to Source Charge (Note 3)

QGS

0.7

Gate to Drain Charge (Note 3)

QGD

0.7

Turn-ON Delay Time (Note 2, 3)

tD(ON)

VDD=-30V, ID=-1A, RG≈6Ω,

VGS=-10V

1.6

Rise Time (Note 2, 3)

2.3

Turn-OFF Delay Time (Note 2, 3)

tD(OFF)

Fall-Time (Note 2, 3)

5.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

(Note 2)

Maximum Body-Diode Continuous Current

TA=25°C (Note 2)

-1.42

Maximum Body-Diode Pulsed Current

ISM

TA=25°C (Note 3)

-6.03

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=-0.8A, VGS=0V

-0.85 -0.95

Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

3. For design aid only, not subject to production testing.

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