F2N60 datasheet(2/6 Pages) UTC

2 / 6 page

F2N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-952.A



ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

2.0

Drain Current

Continuous

2.0

Pulsed (Note 2)

IDM

8.0

Avalanche Energy

Single Pulsed (Note 3)

EAS

100

Repetitive (Note 2)

EAR

4.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation (TC = 25°С)

Junction Temperature

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

100

°С/W

Junction to Case

θJc

2.87

°С/W

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