UT50N03G-TN3-R datasheet(2/6 Pages) UTC

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UT50N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-168.F



ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current

Pulsed Drain Current (Note 2)

IDM

180

Single Pulsed Avalanche Energy (Note 3)

EAS

Power Dissipation

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 3)

θJA

71.4

°C/W

Junction to Case

θJC

3.0

°C/W

Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu

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