UT30N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-140.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

30

A

Pulsed Drain Current

40

A

Avalanche Energy

90

mJ

Power Dissipation

TO-220F

47

W

TO-252

42

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Ambient

TO-220F

62.5

°C/W

TO-252

110

°C/W

Junction-to-Case

TO-220F

2.66

°C/W

TO-252

3.0

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

V

Static Drain-Source On-State Resistance

(Note2)

20

30

mΩ

30

45

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

1170

pF

Output Capacitance

320

pF

Reverse Transfer Capacitance

60

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

(Note 4, 5)

10

20

ns

Turn-On Rise Time

10

20

ns

Turn-Off Delay Time

25

40

ns

Turn-Off Fall Time

15

30

ns

Total Gate Charge

(Note 4, 5)

18

35

nC

Gate-Source Charge

5.5

nC

Gate-Drain Charge

2

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.1

1.5

V

Maximum Continuous Drain-Source Diode

Forward Current

30

A

Maximum Pulsed Drain-Source Diode

Forward Current

40

A

Reverse Recovery Time

50

100

ns

Notes: 1. Guaranteed by design, not subject to production testing.

2. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

3. Essentially independent of operating temperature