UT12N10G-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

UT12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-508.f



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

Pulsed (Note 2)

IDM

Power Dissipation

SOT-223

W/°C

TO-251/TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 2)

SOT-223

θJA

150

°C/W

TO-251/TO-252

Junction to Case

SOT-223

θJC

°C/W

TO-251/TO-252

3.5

Note: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins.

θJC is guaranteed by design while θJA is determined by the user’s board design.

2. When mounted on a 1 in

2 pad of 2 oz copper.



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

100

Drain-Source Leakage Current

IDSS

VDS=100V, VGS=0V

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=6A

150 180 mΩ

Forward Transconductance

gFS

VDS=10V, ID=6A

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

430 500

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

(Note 2)

Total Gate Charge

VGS=10V, VDS=50V, ID=1.3A

Gate to Source Charge

QGS

1.5

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=0.5A, VGS=10V,

RG=25Ω

Rise Time

174 185

Turn-OFF Delay Time

tD(OFF)

132 145

Fall-Time

188 210

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=12A, VGS=0V

1.2

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Guaranteed by design, not subject to production testing.

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