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UT4810DG-S08-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện UT4810DG-S08-R
Giải thích chi tiết về linh kiện  N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
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UT4810D
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
VER.A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
MOSFET
VDSS
30
V
Schottky
30
Gate-Source Voltage
MOSFET
VGSS
±20
V
Continuous Drain Current (TJ=150°C)
MOSFET
ID
7.5
A
Pulsed Drain Current
MOSFET
IDM
50
A
Continuous Source Current
MOSFET
IS
1.25
A
Average Forward Current
Schottky
IF
2.4
A
Pulsed Forward Current
Schottky
IFM
40
A
Avalanche Current
L=0.1mH
IAS
25
A
Single-Pulse Avalanche Energy
EAS
78
mJ
Power Dissipation
MOSFET
PD
1.38
W
Schottky
1.31
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
MOSFET
θJA
73
90
°C/W
Schottky
77
95
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(MOSFET+ Schottky)
IDSS
VDS=30V, VGS=0V
0.007 0.100
mA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
On State Drain Current
ID(ON)
VDS≥5V, VGS=10V
20
A
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=10A
10.5
13.5
mΩ
VGS=4.5V, ID=5A
16
20
DYNAMIC PARAMETERS
Gate Resistance
RG
0.2
0.55
0.9
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=15V, RL=15Ω, RG=6 Ω,
ID≈1 A, VGEN=10V
17
30
ns
Turn-ON Rise Time
tR
13
20
ns
Turn-OFF Delay Time
tD(OFF)
45
90
ns
Turn-OFF Fall-Time
tF
15
25
ns
Total Gate Charge
QG
VDS=15V, VGS=5V, ID=10A
14.5
22
nC
Gate Source Charge
QGS
6.3
nC
Gate Drain Charge
QGD
4.7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=3.0 A, VGS =0 V
0.485 0.53
V
Body Diode Reverse Recovery Time
tRR
IF=3.0 A, dI/dt=100A/μs
36
70
ns



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