6N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

Q

W-R502-710.H



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage (Note 2)

±30

V

Drain Current

Continuous

6

A

3.8

A

Pulsed

24

A

Avalanche Current (Note 2)

6

A

Avalanche Energy

Single Pulsed (Note 3)

582

mJ

Repetitive (Note 2)

13

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.5

V/ns

Power Dissipation

TO-220F1

TO-220F2

42

W

TO-220F

40

TO-262/ TO-263

125

Linear Derarting Factor

TO-220F1

TO-220F2

0.33

W/°C

TO-220F

0.32

TO-262/TO-263

1

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°С/W

Junction to Case

TO-220F1

TO-220F2

2.9

°С/W

TO-220F

3.1

°С/W

TO-262/TO-263

1.0

°С/W

TO-263

1.0

°С/W