18N50L-TQ2-R datasheet(3/7 Pages) UTC

3 / 7 page

18N50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-477.L



ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

500

Gate to Source Voltage

VGSS

±30

Drain Current

Continuous

Pulsed (Note 2)

IDM

72 (Note 5)

Avalanche Energy

Single Pulsed (Note 3)

EAS

945

Repetitive (Note 2)

EAR

23.5

Avalanche Current (Note 2)

IAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F/TO-220F1

38.5

TO-220F2

40.5

TO-220/TO-263

TO-230

235

TO-3P

277

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

5. Drain current limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

TO-220F/TO-220F1

θJc

3.3

°C/W

TO-220F2

3.0

TO-220/TO-263

TO-230

0.53

TO-3P

0.45

18N50L-TQ2-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

18N50L-TQ2-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL