7N90G-TQ2-R datasheet(3/7 Pages) UTC

3 / 7 page

7N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-475.H



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

900

Gate to Source Voltage

VGSS

±30

Continuous Drain Current

TC=25°C

7.0

TC=100°C

4.4

Pulsed Drain Current (Note 2)

IDM

Avalanche Current (Note 2)

IAR

6.4

Single Pulsed Avalanche Energy (Note 3)

EAS

500

Repetitive Avalanche Energy

(Note 2)

EAR

Peak Diode Recovery dv/dt

(Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-3P

240

TO-220F/TO-220F1

TO-220F2

TO-262/TO-263

180

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L=20mH, IAS=7.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-3P

θJA

°C/W

TO-220F/TO-220F1

TO-220F2/TO-262

TO-263

62.5

Junction to Case

TO-3P

θJC

0.52

°C/W

TO-220F/TO-220F1

TO-220F2

2.4

TO-262/TO-263

0.69

7N90G-TQ2-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

7N90G-TQ2-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL